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Directed growth of branched nanowire structures

Author

Summary, in English

We describe the production of hierarchical branched nanowire structures by the sequential seeding of multiple wire generations with metal nanoparticles. Such complex structures represent the next step in the study of functional nanowires, as they increase the potential functionality of nanostructures produced in a self-assembled way. It is possible, for example, to fabricate a variety of active heterostructure segments with different compositions and diameters within a single connected structure. The focus of this work is on epitaxial III-V semiconductor branched nanowire structures, with the two materials GaP and InAs used as typical examples of branched structures with cubic (zinc blende) and hexagonal (wurtzite) crystal structures. The general morphology of these structures will be described, as well as the relationship between morphology and crystal structure.

Publishing year

2007

Language

English

Pages

127-133

Publication/Series

MRS Bulletin

Volume

32

Issue

2

Document type

Journal article

Publisher

Materials Research Society

Topic

  • Condensed Matter Physics
  • Chemical Sciences

Keywords

  • Nanotechnology
  • semiconductors
  • crystal structure
  • Nanowires
  • electron microscopy

Status

Published

ISBN/ISSN/Other

  • ISSN: 1938-1425