Directed growth of branched nanowire structures
Author
Summary, in English
We describe the production of hierarchical branched nanowire structures by the sequential seeding of multiple wire generations with metal nanoparticles. Such complex structures represent the next step in the study of functional nanowires, as they increase the potential functionality of nanostructures produced in a self-assembled way. It is possible, for example, to fabricate a variety of active heterostructure segments with different compositions and diameters within a single connected structure. The focus of this work is on epitaxial III-V semiconductor branched nanowire structures, with the two materials GaP and InAs used as typical examples of branched structures with cubic (zinc blende) and hexagonal (wurtzite) crystal structures. The general morphology of these structures will be described, as well as the relationship between morphology and crystal structure.
Publishing year
2007
Language
English
Pages
127-133
Publication/Series
MRS Bulletin
Volume
32
Issue
2
Document type
Journal article
Publisher
Materials Research Society
Topic
- Condensed Matter Physics
- Chemical Sciences
Keywords
- Nanotechnology
- semiconductors
- crystal structure
- Nanowires
- electron microscopy
Status
Published
ISBN/ISSN/Other
- ISSN: 1938-1425