In Situ Etching for Total Control Over Axial and Radial Nanowire Growth
Author
Summary, in English
We report a method using in situ etching to decouple the axial from the radial nanowire growth pathway, independent of other growth parameters. Thereby a wide range of growth parameters can be explored to improve the nanowire properties without concern of tapering or excess structural defects formed during radial growth. We demonstrate the method using etching by HCl during InP nanowire growth. The improved crystal quality of etched nanowires is indicated by strongly enhanced photoluminescence as compared to reference nanowires obtained without etching.
Publishing year
2010
Language
English
Pages
264-270
Publication/Series
Nano Reseach
Volume
3
Issue
4
Document type
Journal article
Publisher
Springer
Topic
- Chemical Sciences
- Condensed Matter Physics
Keywords
- MOVPE
- photoluminescence
- in situ etching
- nanowire growth
Status
Published
Research group
- Nanometer structure consortium (nmC)
ISBN/ISSN/Other
- ISSN: 1998-0124