The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Nano-Schottky Contacts Realized by Bottom-up Technique

På svenska

Author

Summary, in English

Properties of nanostructures realized by bottom-up techniques are often different from their bulk counterparts.(1) Here we present a study of a nano-Schottky contact formed at the interface between a gold catalytic particle and an epitaxially grown GaxIn1-xAs/InAs nanowire. Selective electrical connections formed to the catalytic particle on one side and to the In As segment on the other side allowed electrical and optical characterization of the formed junction. We demonstrate that the heterostructure region adjacent to the catalytic particle may act as an ultra-small volume unipolar photodetector with potentially ultra-fast response.

Publishing year

2010

Language

English

Pages

252-253

Publication/Series

INEC: 2010 3rd International Nanoelectronics Conference, vols 1 and 2

Document type

Conference paper

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Condensed Matter Physics

Conference name

3rd IEEE International Nanoelectronics Conference

Conference date

2010-01-03 - 2010-01-08

Conference place

Hong Kong, China

Status

Published