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Defect Structure of High-Temperature-Grown GaMnSb/GaSb

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Author

  • P. Romanowski
  • J. Bak-Misiuk
  • E. Dynowska
  • J. Z. Domagala
  • Janusz Sadowski
  • T. Wojciechowski
  • A. Barcz
  • R. Jakiela
  • W. Caliebe

Summary, in English

GaMnSb/GaSb(100) layers with embedded MnSb inclusions have been grown at 720 K using MBE technique. This paper presents the investigation of the defect structure of Ga1-xMnxSb layers with different content of manganese (up to x = 0.07). X-ray diffraction method using conventional and synchrotron radiation was applied. Dimensions and shapes of inclusions were detected by scanning electron microscopy. Depth profiles of elements were measured using secondary ion mass spectroscopy technique.

Department/s

Publishing year

2010

Language

English

Pages

341-343

Publication/Series

Acta Physica Polonica A

Volume

117

Issue

2

Document type

Conference paper

Publisher

Polish Academy of Sciences

Topic

  • Physical Sciences
  • Natural Sciences

Conference name

8th National Meeting of the Synchrotron Radiation Users

Conference date

2009-09-24 - 2009-09-26

Conference place

Podlesice, Poland

Status

Published

ISBN/ISSN/Other

  • ISSN: 0587-4246