A 175uW 100MHz-2GHz inductorless receiver frontend in 65nm CMOS
Author
Summary, in English
This paper presents an inductorless ultra-low power frontend for applications such as sensor networks and medical implants. By using a completely inductorless topology the chip area is just 0.017mm2, excluding pads. A real input impedance of 300Ω is achieved with current feedback. Manufactured in 65nm CMOS, it measures more than 17dB gain from 100MHz to 2000MHz while consuming only 175μW from a 0.9V supply (The LNA consumes 115μW). The measured noise figure and IIP3 is 11dB and -16.8dBm respectively.
Department/s
Publishing year
2010
Language
English
Document type
Conference paper
Topic
- Electrical Engineering, Electronic Engineering, Information Engineering
Keywords
- impedance matching
- Low Noise Amplifier
- CMOS
- Mixer
- LNA
- inductorless
- ultra low power
- Front-end
Conference name
NORCHIP Conference, 2010
Conference date
2010-11-15 - 2010-11-16
Conference place
Tampere, Finland
Status
Published
Project
- EIT_UPD Wireless Communication for Ultra Portable Devices
Research group
- Analog RF