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Influence of Ion Implantation on Magnetic, Structural and Optical Properties of (Ga,Mn)As Epitaxial Films

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Author

  • O. Yastrubchak
  • J. Z. Domagala
  • Janusz Sadowski
  • M. Kulik
  • J. Zuk
  • R. Szymczak
  • A. L. Toth
  • T. Wosinski

Summary, in English

We performed implantation experiments; applying both the chemically active oxygen ions and inactive ions of neon noble gas, to thin epitaxial films of (Ga,Mn)As ferromagnetic semiconductor. Inspection of their magnetic properties by means of a superconducting quantum interference device magnetometer revealed that the implantation with a low dose of either O or Ne ions completely suppressed ferromagnetism in the films. Both the high resolution X-ray diffraction technique and the Raman spectroscopy showed significant changes in the structural and optical properties of the films caused by oxygen and neon implantation.

Department/s

Publishing year

2008

Language

English

Pages

1445-1450

Publication/Series

ACTA PHYSICA POLONICA A

Volume

114

Issue

5

Document type

Conference paper

Publisher

Polish Academy of Sciences

Topic

  • Natural Sciences
  • Physical Sciences

Conference name

37th International School on the Physics of Semiconducting Compounds

Conference date

2008-06-07 - 2008-06-13

Status

Published

ISBN/ISSN/Other

  • ISSN: 0587-4246