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Unified model of fractal conductance fluctuations for diffusive and ballistic semiconductor devices

På svenska

Author

  • C. A. Marlow
  • R. P. Taylor
  • T. P. Martin
  • B. C. Scannell
  • H. Linke
  • M. S. Fairbanks
  • G. D. R. Hall
  • I. Shorubalko
  • Lars Samuelson
  • T. M. Fromhold
  • C. V. Brown
  • B. Hackens
  • S. Faniel
  • C. Gustin
  • V. Bayot
  • X. Wallart
  • S. Bollaert
  • A. Cappy
Show all

Summary, in English

We present an experimental comparison of magnetoconductance fluctuations measured in the ballistic, quasiballistic, and diffusive scattering regimes of semiconductor devices. In contradiction to expectations, we show that the spectral content of the magnetoconductance fluctuations exhibits an identical fractal behavior for these scattering regimes and that this behavior is remarkably insensitive to device boundary properties. We propose a unified model of fractal conductance fluctuations in the ballistic, quasiballistic, and diffusive transport regimes, in which the generic fractal behavior is generated by a subtle interplay between boundary and material-induced chaotic scattering events.

Publishing year

2006

Language

English

Publication/Series

Physical Review B (Condensed Matter and Materials Physics)

Volume

73

Issue

19

Document type

Journal article

Publisher

American Physical Society

Topic

  • Condensed Matter Physics

Status

Published

ISBN/ISSN/Other

  • ISSN: 1098-0121