Stacked InAs quantum dots in InP studied by cross-sectional scanning tunnelling microscopy
Author
Summary, in English
We report on cross-sectional scanning tunnelling microscopy (XSTM) measurements on vertically stacked InAs quantum dots in InP barriers. We have investigated two-, five- and tenfold stacked quantum dot structures,grown by low-pressure metal-organic vapour phase epitaxy. The XSTM images reveal that the quantum dots are generally vertically well aligned, and have a truncated pyramidal shape in agreement with similar studies of InAs dots in GaAs. STM images displaying atomic resolution indicate that the dots have a pure InAs stoichiometry, with intermixing only occurring in the top and bottom dot rows. Further, we have investigated various anomalies (considered as defects) as observed in the quantum dot stacks. The origins of these anomalies are discussed and compared to theoretical predictions available so far.
Publishing year
2004
Language
English
Pages
1701-1707
Publication/Series
Nanotechnology
Volume
15
Issue
12
Document type
Journal article
Publisher
IOP Publishing
Topic
- Nano Technology
Status
Published
ISBN/ISSN/Other
- ISSN: 0957-4484