The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Buffer layer free large area bi-layer graphene on SiC(0001)

På svenska

Author

Summary, in English

The influence of hydrogen exposures on monolayer graphene grown on the silicon terminated SiC(0 0 0 1) surface is investigated using photoelectron spectroscopy (PES), low-energy electron microscopy (LEEM) and micro low-energy electron diffraction (mu-LEED). Exposures to ionized hydrogen are shown to have a pronounced effect on the carbon buffer (interface) layer. Exposures to atomic hydrogen are shown to actually convert/transform the monolayer graphene plus carbon buffer layer to bi-layer graphene, i.e. to produce carbon buffer layer free bi-layer graphene on SiC(0 0 0 1). This process is shown to be reversible, so the initial monolayer graphene plus carbon buffer layer situation is recreated after heating to a temperature of about 950 degrees C. A tentative model of hydrogen intercalation is suggested to explain this single to bi-layer graphene transformation mechanism. Our findings are of relevance and importance for various potential applications based on graphene-SiC structures and hydrogen storage. (C) 2009 Elsevier B.V. All rights reserved.

Department/s

Publishing year

2010

Language

English

Pages

4-7

Publication/Series

Surface Science

Volume

604

Issue

2

Document type

Journal article

Publisher

Elsevier

Topic

  • Natural Sciences
  • Physical Sciences

Keywords

  • LEEM
  • Silicon carbide
  • Epitaxial
  • Graphene
  • Bi-layer
  • PES
  • Hydrogenation
  • LEED

Status

Published

ISBN/ISSN/Other

  • ISSN: 0039-6028