Tunneling-based devices and circuits

Summary, in English

We describe the implementation of a gated resonant tunneling diode and its application in a wavelet generator. The GaAs-based device is fabricated by embedding a metal gate directly above a double barrier heterostructure with a peak current of 120 kA/cm2. The gate is used to modulate the tunneling current via the Schottky depletion around the buried metal. We integrate the gated tunnel diodes in oscillator circuits and use the gate to form RF-bursts or wavelets. Measured data in the K- and V-band verify a good control of the length, phase, and pulse position reaching for pulses with lengths well below 100 ps.

• Author: Lars-Erik Wernersson; Mikael Egard; Mats Ärlelid; Erik Lind
• Department/s: Department of Electrical and Information Technology; Solid State Physics
• Publishing year: 2010
• Language: English
• Pages: 190-193
• Publication/Series: 2010 IEEE International Conference on IC Design and Technology (ICICDT)
• Links: http://dx.doi.org/10.1109/ICICDT.2010.5510256
• Document type: Conference paper
• Publisher: IEEE - Institute of Electrical and Electronics Engineers Inc.
• Topic: Electrical Engineering, Electronic Engineering, Information Engineering
• Conference name: IEEE International Conference on IC Design and Technology (ICICDT)
• Conference date: 2010-06-04
• Conference place: MINATEC, Grenoble, France
• Status: Published
• Project: EIT_HSWC:RFNano RF tranceivers and nano devices
• Research group: Elektronikkonstruktion; Nano
• ISBN/ISSN/Other: ISBN: 978-1-4244-5773-1