Detection of charge states in nanowire quantum dots using a quantum point contact
Author
Summary, in English
The authors demonstrate operation of a charge readout scheme for quantum dots in a semiconductor
nanowire using a quantum point contact defined in a GaAs/AlGaAs two-dimensional electron gas
beneath the nanowire. The quantum dots were fabricated by epitaxial growth of InP barriers along
a n-type InAs nanowire. Applying negative voltages to two split-gate electrodes aligned to the
nanowire induces a quantum point contact in the two-dimensional electron gas such that charging of
quantum dots in the nanowire modulates the quantum point contact transmission, thus resulting in
the desired detector response.
nanowire using a quantum point contact defined in a GaAs/AlGaAs two-dimensional electron gas
beneath the nanowire. The quantum dots were fabricated by epitaxial growth of InP barriers along
a n-type InAs nanowire. Applying negative voltages to two split-gate electrodes aligned to the
nanowire induces a quantum point contact in the two-dimensional electron gas such that charging of
quantum dots in the nanowire modulates the quantum point contact transmission, thus resulting in
the desired detector response.
Department/s
Publishing year
2007
Language
English
Publication/Series
Applied Physics Letters
Volume
90
Document type
Journal article
Publisher
American Institute of Physics (AIP)
Topic
- Condensed Matter Physics
Status
Published
Research group
- Linne Center for Nanoscience and Quantum Engineering
ISBN/ISSN/Other
- ISSN: 0003-6951