Detection of spin-states in Mn-oped gallium arsenide films

Summary, in English

We show that isolated magnetic dipoles centred at the position of manganese impurities in a gallium arsenide lattice lead to spin polarized states in the bandgap of the III-V semiconductor. Spectroscopy simulations with a tungsten tip agree well with experimental data; in this case, no difference can be observed for the two magnetic groundstates. But if the signal is read with a magnetic iron tip, it changes by a factor of up to 20, depending on the magnetic orientation of the Mn atom.

• Author: Werner A Hofer; Krisztian Palotas; Gilberto Teobaldi; Janusz Sadowski; Anders Mikkelsen; Edvin Lundgren
• Department/s: MAX IV Laboratory; Synchrotron Radiation Research
• Publishing year: 2007
• Language: English
• Publication/Series: Nanotechnology
• Volume: 18
• Issue: 4
• Links: http://dx.doi.org/10.1088/0957-4484/18/4/044006
• Document type: Journal article
• Publisher: IOP Publishing
• Topic: Nano Technology
• Status: Published
• ISBN/ISSN/Other: ISSN: 0957-4484