Random telegraph noise in the photon emission from semiconductor quantum dots
Author
Summary, in English
This study has observed and investigated random telegraph noise in the photoluminescence from InAs quantum dots in GaAs and InP quantum dots in GaInP. The dots are grown by the Stranski-Krastanow technique with a sufficiently low surface density that individual dots easily could be investigated. The luminescence from many single quantum dots, exhibiting switching between two levels, has been spectrally resolved as a function of time. The random telegraph noise is only observed in the presence of band filling. Results show no spectral shift of the emission in the different states. It is only the intensity, mainly for higher energy peaks that changes. The InAs quantum dots behave very similarly to InP/GaInP and InGaAs/GaAs quantum dots with respect to random telegraph noise. The similarities between the different systems argue for a common mechanism behind the blinking. Experiments are performed where the switching behaviour is changed in all the different systems supporting the idea that non-radiative defects are responsible
Department/s
Publishing year
2005
Language
English
Pages
18-18
Publication/Series
2005 European Quantum Electronics Conference
Document type
Conference paper
Publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
Topic
- Condensed Matter Physics
Keywords
- switching behaviour
- nonradiative defects
- InAs-GaAs-InP-GaInP
- band filling
- surface density
- Stranski-Krastanow technique
- quantum dots
- photoluminescence
- semiconductor quantum dots
- random telegraph noise
- photon emission
Conference name
2005 European Quantum Electronics Conference
Conference date
2005-06-12 - 2005-06-17
Conference place
Munich, Germany
Status
Published
ISBN/ISSN/Other
- ISBN: 0-7803-8973-5