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Probing the Wurtzite Conduction Band Structure Using State Filling in Highly Doped InP Nanowires.

Author

Summary, in English

We have grown InP nanowires doped with hydrogen sulfide, which exhibit sulfur concentrations of up to 1.4%. The highest doped nanowires show a pure wurtzite crystal structure, in contrast to bulk InP which has the zinc blende structure. The nanowires display photoluminescence which is strongly blue shifted compared with the band gap, well into the visible range. We find evidence of a second conduction band minimum at the gamma point about 0.23 eV above the band edge, in excellent agreement with recent theoretical predictions. Electrical measurements show high conductivity and breakdown currents of 10(7) A/cm(2).

Publishing year

2011

Language

English

Pages

2286-2290

Publication/Series

Nano Letters

Volume

11

Issue

Online May 23, 2011

Document type

Journal article

Publisher

The American Chemical Society (ACS)

Topic

  • Nano Technology
  • Condensed Matter Physics

Status

Published

Research group

  • Nanometer structure consortium (nmC)

ISBN/ISSN/Other

  • ISSN: 1530-6992