Probing the Wurtzite Conduction Band Structure Using State Filling in Highly Doped InP Nanowires.
Author
Summary, in English
We have grown InP nanowires doped with hydrogen sulfide, which exhibit sulfur concentrations of up to 1.4%. The highest doped nanowires show a pure wurtzite crystal structure, in contrast to bulk InP which has the zinc blende structure. The nanowires display photoluminescence which is strongly blue shifted compared with the band gap, well into the visible range. We find evidence of a second conduction band minimum at the gamma point about 0.23 eV above the band edge, in excellent agreement with recent theoretical predictions. Electrical measurements show high conductivity and breakdown currents of 10(7) A/cm(2).
Publishing year
2011
Language
English
Pages
2286-2290
Publication/Series
Nano Letters
Volume
11
Issue
Online May 23, 2011
Document type
Journal article
Publisher
The American Chemical Society (ACS)
Topic
- Nano Technology
- Condensed Matter Physics
Status
Published
Research group
- Nanometer structure consortium (nmC)
ISBN/ISSN/Other
- ISSN: 1530-6992