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GaMnAs: Layers, Wires and Dots

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Author

  • Janusz Sadowski

Summary, in English

Thin layers of GaMnAs ferromagnetic semiconductor grown by molecular beam epitaxy on GaAS(001) substrates were studied. To improve their magnetic properties the post-growth annealing procedures were applied, using the surface passivation layers of amorphous arsenic. This post-growth treatment effectively increases the ferromagnetic-to-paramagnetic phase transition temperature in GaMnAs, and provides surface-rich MnAs layer which can be used for formation of low-dimensional structures such as superlattices. If the surface rich it-InAs layer consists of MnAs dots, then it is possible to grow Mn-doped GaAs nanowires.

Department/s

Publishing year

2008

Language

English

Pages

1001-1012

Publication/Series

ACTA PHYSICA POLONICA A

Volume

114

Issue

5

Document type

Conference paper

Publisher

Polish Academy of Sciences

Topic

  • Physical Sciences
  • Natural Sciences

Conference name

37th International School on the Physics of Semiconducting Compounds

Conference date

2008-06-07 - 2008-06-13

Status

Published

ISBN/ISSN/Other

  • ISSN: 0587-4246