Serendipitous noise reduction in inductively degenerated CMOS RF LNAs
Author
Summary, in English
The design of radio-frequency inductively-degenerated
CMOS low-noise-amplifiers does not follow the
guidelines for minimum noise figure. Nonetheless,
state-of-the-art implementations achieve noise figure
values very close to the theoretical minimum. In this
brief contribution, we point out that this is due to the
effect of the parasitic overlap capacitances in the MOS
device acting as transconductor. In particular, we
show that overlap capacitances lead to a significant
induced-gate-noise reduction, especially when deep
sub-micron CMOS processes are used.
CMOS low-noise-amplifiers does not follow the
guidelines for minimum noise figure. Nonetheless,
state-of-the-art implementations achieve noise figure
values very close to the theoretical minimum. In this
brief contribution, we point out that this is due to the
effect of the parasitic overlap capacitances in the MOS
device acting as transconductor. In particular, we
show that overlap capacitances lead to a significant
induced-gate-noise reduction, especially when deep
sub-micron CMOS processes are used.
Publishing year
2003
Language
English
Pages
24-26
Publication/Series
Proceedings of the 2003 NORCHIP Conference
Document type
Conference paper
Topic
- Electrical Engineering, Electronic Engineering, Information Engineering
Status
Published