High-Performance InAs Nanowire MOSFETs

Summary, in English

In this letter, we present a 15-nm-diameter InAs nanowire MOSFET with excellent on and off characteristics. An n-i-n doping profile was used to reduce the source and drain resistances, and an Al2O3/HfO2 bilayer was introduced in the high-k process. The nanowires exhibit high drive currents, up to 1.25 A/mm, normalized to the nanowire circumference, and current densities up to 34 MA/cm2 (VD = 0.5 V). For a nominal LG = 100 nm, we observe an extrinsic transconductance (gm) of 1.23 S/mm and a subthreshold swing of 93 mV/decade at VD = 10 mV.

• Author: Anil Dey; Claes Thelander; Erik Lind; Kimberly Dick Thelander; Mattias Borg; Magnus Borgström; Peter Nilsson; Lars-Erik Wernersson
• Department/s: Department of Electrical and Information Technology; Solid State Physics; Centre for Analysis and Synthesis; NanoLund: Centre for Nanoscience
• Publishing year: 2012
• Language: English
• Pages: 791-793
• Publication/Series: IEEE Electron Device Letters
• Volume: 33
• Issue: 6
• Full text: - 1 MB; Download statistics
• Links: http://dx.doi.org/10.1109/LED.2012.2190132
• Document type: Journal article
• Publisher: IEEE - Institute of Electrical and Electronics Engineers Inc.
• Topic: Electrical Engineering, Electronic Engineering, Information Engineering
• Status: Published
• ISBN/ISSN/Other: ISSN: 0741-3106