Carrier and field dynamics around nanoscale Schottky contacts investigated by ultrafast near-field optics

Summary, in English

We present femtosecond-resolved optical near-field pump-probe measurements of spatiotemporal carrier dynamics around a single nanoscale tungsten (W) disk embedded in GaAs. In these samples, Schottky contacts are formed at the W/GaAs interface. The experimental results are modeled by a selfconsistent treatment of the drift-diffusion equation for the carriers and Poisson's equation for the built-in electric field. At lower optically excited carrier densities, we observe that the built-in field suppresses electron transport towards and trapping into the metal particles. In this regime, an accumulation of carriers is seen at the edge of the depletion region of the Schottky contacts. The calculation reveals that the formation of a self-induced dynamic potential well is the origin of this result. In the high-density regime, efficient carrier transport towards and trapping into the W nanoparticle take place, resulting from the screening of the built-in field. These results allow us to describe measurements of the carrier dynamics in annealed low-temperature grown GaAs and demonstrate that the coupling of the carrier and field dynamics can substantially affect carrier trapping in metal-semiconductor composite materials.

• Author: M Achermann; F Morier-Genoud; Werner Seifert; Lars-Erik Wernersson; U Siegner; U Keller
• Department/s: Solid State Physics; Department of Electrical and Information Technology
• Publishing year: 2002
• Language: English
• Publication/Series: Physical Review B (Condensed Matter and Materials Physics)
• Volume: 65
• Issue: 4
• Links: http://dx.doi.org/10.1103/PhysRevB.65.045322
• Document type: Journal article
• Publisher: American Physical Society
• Topic: Condensed Matter Physics; Electrical Engineering, Electronic Engineering, Information Engineering
• Status: Published
• ISBN/ISSN/Other: ISSN: 1098-0121