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Growth and characterization of GaAs and InAs nano-whiskers and InAs/GaAs heterostructures

Author

Summary, in English

Semiconducting InAs and GaAs nano-whiskers have been grown using a chemical beam epitaxy approach in combination with size-selected catalytic Au aerosol particles. The characterization of InAs and GaAs whiskers shows high crystalline quality as seen by transmission electron microscopy. Gate-dependent transport measurements suggests a diffusive electronic transport mechanism. We have also combined these two material systems by growing a very abrupt heterostructure interface within the whiskers, allowing the growth of highly mismatched structures without misfit dislocations. (C) 2002 Elsevier Science B.V. All rights reserved.

Publishing year

2002

Language

English

Pages

1126-1130

Publication/Series

Physica E: Low-dimensional Systems and Nanostructures

Volume

13

Issue

2-4

Document type

Conference paper

Publisher

Elsevier

Topic

  • Condensed Matter Physics
  • Chemical Sciences

Keywords

  • III-V
  • one-dimensional transport
  • nano-whiskers
  • heterostructures

Conference name

Tenth International Conference on Modulated Semiconductor Structures. MSS 10

Conference date

2001-07-23 - 2001-07-27

Conference place

Linz, Austria

Status

Published

ISBN/ISSN/Other

  • ISSN: 1386-9477