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Tunnel Field-Effect Transistors Based on InP-GaAs Heterostructure Nanowires.

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Author

Summary, in English

We present tunneling field-effect transistors fabricated from InP-GaAs heterostructure nanowires with an n-i-p doping profile, where the intrinsic InP region is modulated by a top gate. The devices show an inverse subthreshold slope down to 50 mV/dec averaged over two decades with an on/off current ratio of approximately 10(7) for a gate voltage swing (V(GS)) of 1 V and an on-current of 2.2 μA/μm. Low-temperature measurements suggest a mechanism of trap-assisted tunneling, possibly explained by a narrow band gap segment of InGaAsP.

Publishing year

2012

Language

English

Pages

3109-3113

Publication/Series

ACS Nano

Volume

6

Issue

4

Document type

Journal article

Publisher

The American Chemical Society (ACS)

Topic

  • Nano Technology

Status

Published

ISBN/ISSN/Other

  • ISSN: 1936-086X