A novel device principle for nanoelectronics
Author
Summary, in English
We report on the results of our recent theoretical and experimental investigations of a novel, room temperature electrical property of three-terminal ballistic junctions (TBJs). For a symmetric TBJ device, it is found that when finite voltages V-1 and V-r are applied in push-pull fashion, with V-1 = V and V-r = - V. to the left and right branches, the voltage output V-c from the central branch will always be negative. This property is in strong contrast to a symmetric three-terminal device made from conventional diffusive conductors, for which Ohm's law predicts a constant zero output of V-c for all V-1 - V-c.This novel characteristic appears even when the device symmetry is broken, provided that V is greater than the threshold. It is also shown that the TBJ devices show a good parabolic behavior for V-c vs. V in a large range of voltages V.
Department/s
Publishing year
2002
Language
English
Pages
417-420
Publication/Series
Materials Science and Engineering C: Materials for Biological Applications
Volume
19
Issue
1-2
Document type
Journal article
Publisher
Elsevier
Topic
- Condensed Matter Physics
Keywords
- 300 K
- parabolic behavior
- Ga<sub>0.25</sub>In<sub>0.75</sub>As-InP
- voltage
- novel electrical characteristic
- symmetric three-terminal device
- broken device symmetry
- 2DEG
- semiconductor QW
- push-pull fashion
- symmetric TBJ device
- three-terminal ballistic junctions
- nanoelectronics
- room temperature electrical property
Status
Published
ISBN/ISSN/Other
- ISSN: 0928-4931