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Heterostructures in one-dimensional nanowires

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Author

Summary, in English

Chemical beam epitaxy has been used to grow III/V nanowires seeded from size selected Au aerosol particles. Both chemically uniform InAs wires as well as InAs wires containing one or several heterostructure interfaces were grown. The interfaces were characterized in a transmission electron microscope revealing atomically sharp interfaces and also that, barriers as thin as only 2-3 monolayers and up to several hundred nanometer could be inserted into homogenous InAs wires. Further more, electrical measurements on both homogenous wires and wires containing heterostructures have been performed to investigate the functionality of nanowire based device elements

Publishing year

2002

Language

English

Publication/Series

7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science

Document type

Conference paper

Publisher

Lund University

Topic

  • Condensed Matter Physics

Keywords

  • monolayers
  • InAs-Au
  • nanowire based device elements
  • electrical measurements
  • transmission electron microscopy
  • atomically sharp interfaces
  • heterostructure interfaces
  • chemically uniform InAs wires
  • size selected Au aerosol particles
  • chemical beam epitaxy
  • III/V nanowires growth
  • one dimensional nanowires heterostructures
  • barriers

Conference name

Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)

Conference date

2002-06-24 - 2002-06-28

Conference place

Malmö, Sweden

Status

Published