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Growth and segregation of GaAs-AlxIn1-xP core-shell nanowires

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Author

Summary, in English

The development of a ternary AlxIn1-xP shell grown around GaAs nanowires epitaxially grown in the [(1) over bar (1) over bar (1) over bar] direction has been studied. Morphology and composition of the shell have been studied using cross-sectional transmission electron microscopy (TEM). The side facets of the shell are found to develop dominant {1 (1) over bar 0} macro facets with small (approx. 5 nm) {1 1 (2) over bar} facets independent of the GaAs core side facets. Phase segregation is observed as AIP developing from the {1 1 (2) over bar} facets, while Al0.5In0.5P is found in the rest of the ternary shell. (C) 2010 Elsevier B.V. All rights reserved.

Publishing year

2010

Language

English

Pages

1755-1760

Publication/Series

Journal of Crystal Growth

Volume

312

Issue

10

Document type

Journal article

Publisher

Elsevier

Topic

  • Condensed Matter Physics
  • Chemical Sciences

Keywords

  • Core-shell nanowire
  • HRTEM
  • Segregation
  • GaAs
  • AlxIn1-xP

Status

Published

ISBN/ISSN/Other

  • ISSN: 0022-0248