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Microcircuit tailoring in ferromagnetic semiconductor (Ga,Mn)As

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Author

  • T Figielski
  • T Wosinski
  • A Morawski
  • O Pelya
  • Janusz Sadowski
  • AL Toth
  • J Jagielski

Summary, in English

In order to search for novel giant-magnetoresistance systems, we fabricated and investigated narrow constrictions in the layers of the ferromagnetic semiconductor (Ga,Mn)As. We found that constrictions a few hundred nanometers wide, tailored by means of the electron-beam lithography and wet etching, were not conducting at liquid helium temperatures unless illuminated, probably due to the trapping action of surface states appearing on an extra surface area denuded by the etching. To avoid this, we used selective implantation of oxygen ions into the ferromagnetic layer to tailor the constrictions. We have shown that such an implantation inactivates Mn acceptors in the layer and destroys ferromagnetism. We propose an application of oxygen ion implantation as a method of fabricating microcircuits in future spin electronics based on Mn-containing III-V semiconductor compounds.

Department/s

Publishing year

2003

Language

English

Pages

228-231

Publication/Series

Physica Status Solidi. A, Applied Research

Volume

195

Issue

1

Document type

Journal article

Publisher

John Wiley & Sons Inc.

Topic

  • Natural Sciences
  • Physical Sciences

Status

Published

ISBN/ISSN/Other

  • ISSN: 0031-8965