InAs1-xPx Nanowires for Device Engineering

Summary, in English

We present the growth of homogeneous InAs1-xPx nanowires as well as InAs1-xPx heterostructure segments in InAs nanowires with P

concentrations varying from 22% to 100%. The incorporation of P has been studied as a function of TBP/TBAs ratio, temperature, and diameter

of the wires. The crystal structure of the InAs as well as the InAs1-xPx segments were found to be wurtzite as determined from high-resolution

transmission electron microscopy. Furthermore, temperature-dependent electrical transport measurements were performed on individual

heterostructured wires to extract the conduction band offset of InAs1-xPx relative to InAs as a function of composition. From these measurements

we extract a value of the linear coefficient of the conduction band versus x of 0.6 eV and a nonlinear coefficient, or bowing parameter, of 0.2

eV. Finally, homogeneous InAs0.8P0.2 nanowires were shown to have a nondegenerate n-type doping and function as field-effect transistors at

room temperature.

• Author: Ann Persson; Mikael Björk; Sören Jeppesen; Jakob Wagner; Reine Wallenberg; Lars Samuelson
• Department/s: Solid State Physics; Centre for Analysis and Synthesis
• Publishing year: 2006
• Language: English
• Pages: 403-407
• Publication/Series: Nano Letters
• Volume: 6
• Issue: 3
• Links: http://pubs.acs.org/cgi-bin/article.cgi/nalefd/2006/6/i03/pdf/nl052181e.pdf; http://dx.doi.org/10.1021/nl052181e
• Document type: Journal article
• Publisher: The American Chemical Society (ACS)
• Topic: Chemical Sciences; Condensed Matter Physics
• Status: Published
• ISBN/ISSN/Other: ISSN: 1530-6992