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Magnetotransport properties of short period GaMnAs/InGaAs superlattices

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Author

  • C. Hernandez
  • F. Terki
  • R. Viennois
  • S. Charar
  • Janusz Sadowski
  • D. Maude

Summary, in English

Magnetotransport properties of GaMnAs/InGaAs superlattice structure and GaMnAs/GaAs single layers have been investigated from 4 to 300 K and magnetic fields up to 22.5 T. All these magnetic semiconductors show the so-called "paramagnetic-to-ferromagnetic phase transition''. However, in GaMnAs/InGaAs superlattice beside the Curie Wiess temperature (T-c similar to 40 K), a new phase transition is observed close to 13 K. (C) 2004 Elsevier B.V. All rights reserved.

Department/s

Publishing year

2004

Language

English

Pages

1429-1430

Publication/Series

Journal of Magnetism and Magnetic Materials

Volume

272

Document type

Journal article

Publisher

Elsevier

Topic

  • Natural Sciences
  • Physical Sciences

Keywords

  • diluted magnetic semiconductor
  • ferromagnetism
  • magnetotransport

Status

Published

ISBN/ISSN/Other

  • ISSN: 0304-8853