High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs
Author
Summary, in English
In this paper we present 15 nm InAs nanowire lateral
MOSFETs with an Ω-gate. The nanowires are grown from
size-selected Au-aerosols by means of metal-organic vapor
phase epixtaxy (MOVPE). In order to reduce the source and
drain resistances, n-type dopants were introduced in the bottom
and top parts of the nanowire forming a n-i-n structure. We
report experimental data for 15 nm InAs nanowire MOSFETs,
LG = 150 nm, with a normalized transconducatance gm =
0.7 S/mm (normalized to the circumference) and a current
density Je = 24 MA/cm, comparable to modern high electron
mobility transistors (HEMTs)
MOSFETs with an Ω-gate. The nanowires are grown from
size-selected Au-aerosols by means of metal-organic vapor
phase epixtaxy (MOVPE). In order to reduce the source and
drain resistances, n-type dopants were introduced in the bottom
and top parts of the nanowire forming a n-i-n structure. We
report experimental data for 15 nm InAs nanowire MOSFETs,
LG = 150 nm, with a normalized transconducatance gm =
0.7 S/mm (normalized to the circumference) and a current
density Je = 24 MA/cm, comparable to modern high electron
mobility transistors (HEMTs)
Department/s
Publishing year
2012
Language
English
Document type
Conference paper
Topic
- Electrical Engineering, Electronic Engineering, Information Engineering
- Condensed Matter Physics
Keywords
- high-performance
- MOSFETs
- InAs
- drive current
- transconductance
Conference name
GigaHertz Symposium 2012
Conference date
2012-03-06 - 2012-03-07
Conference place
Frösundavik, Stockholm, Sweden
Status
Published