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A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodes

Author

Summary, in English

A method for evaluating a band offset of a heterojunction is proposed by measuring temperature dependence of current-voltage (I-V) characteristics in triple-barrier resonant tunneling diodes (TBRTDs). The method was applied for investigating a conduction band offset by using GaAs0.25P0.75/GaAs TBRTDs with thin strain heterobarriers grown by MOCVD and DeltaE(c) was estimated as 200-240 meV. In the strain-barrier TBRTDs, negative differential resistance was observed below 100 K. (C) 2002 Elsevier Science B.V. All rights reserved.

Publishing year

2002

Language

English

Pages

288-293

Publication/Series

Applied Surface Science

Volume

190

Issue

1-4

Document type

Journal article

Publisher

Elsevier

Topic

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • heterointerface
  • strain barrier
  • band offset
  • GaAsP/GaAs
  • triple-barrier resonant tunneling diodes
  • thermionic emission

Status

Published

ISBN/ISSN/Other

  • ISSN: 1873-5584