A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodes
Author
Summary, in English
A method for evaluating a band offset of a heterojunction is proposed by measuring temperature dependence of current-voltage (I-V) characteristics in triple-barrier resonant tunneling diodes (TBRTDs). The method was applied for investigating a conduction band offset by using GaAs0.25P0.75/GaAs TBRTDs with thin strain heterobarriers grown by MOCVD and DeltaE(c) was estimated as 200-240 meV. In the strain-barrier TBRTDs, negative differential resistance was observed below 100 K. (C) 2002 Elsevier Science B.V. All rights reserved.
Publishing year
2002
Language
English
Pages
288-293
Publication/Series
Applied Surface Science
Volume
190
Issue
1-4
Document type
Journal article
Publisher
Elsevier
Topic
- Condensed Matter Physics
- Electrical Engineering, Electronic Engineering, Information Engineering
Keywords
- heterointerface
- strain barrier
- band offset
- GaAsP/GaAs
- triple-barrier resonant tunneling diodes
- thermionic emission
Status
Published
ISBN/ISSN/Other
- ISSN: 1873-5584