GaSb nanowire single-hole transistor

Summary, in English

We present an experimental study of single hole transistors (SHTs) made from p-type GaSb nanowires. Closely spaced source-drain electrodes are fabricated onto GaSb nanowires to define a SHT within a GaSb nanowire. Room temperature back-gate transfer characteristics show typical hole transport behavior. The fabricated devices are characterized by transport measurements at 1.5 K, where periodic conductance oscillations due to Coulomb blockade are observed and a charging energy of 5 meV is determined. (C) 2011 American Institute of Physics. [doi:10.1063/1.3673328]

• Author: Bahram Ganjipour; Henrik Nilsson; Mattias Borg; Lars-Erik Wernersson; Lars Samuelson; Hongqi Xu; Claes Thelander
• Department/s: Solid State Physics; Department of Electrical and Information Technology
• Publishing year: 2011
• Language: English
• Publication/Series: Applied Physics Letters
• Volume: 99
• Issue: 26
• Links: http://dx.doi.org/10.1063/1.3673328
• Document type: Journal article
• Publisher: American Institute of Physics (AIP)
• Topic: Condensed Matter Physics; Electrical Engineering, Electronic Engineering, Information Engineering
• Status: Published
• Research group: Nano
• ISBN/ISSN/Other: ISSN: 0003-6951