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Assembling Ferromagnetic Single-electron Transistors with Atomic Force Microscopy

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Author

Editor

  • Faiz Rahman

Summary, in English

Ferromagnetic Single Electron Transistors (F-SETs) comprise ferromagnetic electrodes connected to a ferromagnetic- or non-magnetic central island via tunnel barriers. These devices are important for studies of spin-transport physics in confined structures. Here we describe the development of a novel type of AFM-assembled nano-scale F-SETs suitable for spin-transport investigations at temperatures above 4.2 K. The ingenious fabrication technique means that their electrical characteristics can be tuned in real-time during the fabrication sequence by re-positioning the central island with Ångström precision.

Publishing year

2008

Language

English

Pages

29-40

Publication/Series

Nanostructures in electronics and photonics

Document type

Book chapter

Publisher

Pan Stanford Publishing

Topic

  • Condensed Matter Physics

Status

Published

ISBN/ISSN/Other

  • ISBN: 978-981-4241-10-6
  • ISBN: 9789814241120