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A new understanding of au-assisted growth of III-V semiconductor nanowires

Author

Summary, in English

Semiconductor nanowires of III-V materials have generated much interest in recent years. However, the growth mechanisms by which these structures form are not well understood. The so-called vapor-liquid-solid (VLS) mechanism has often been proposed for III-V systems, with a chemically inert, liquid metal particle (typically Au) acting as a physical catalyst. We assert here that An is, in fact, not inert with respect to the semiconductor material but rather interacts with it to form a variety of intermetallic compounds. Moreover, we suggest that III-V nanowire growth can best be understood if the metallic particle is not a liquid, but a solid-phase solution or compound containing An and the group III material. The four materials GaP, GaAs, InP, and InAs will be considered, and growth behavior related to their particular temperature-dependent interaction with Au.

Publishing year

2005

Language

English

Pages

1603-1610

Publication/Series

Advanced Functional Materials

Volume

15

Issue

10

Document type

Journal article

Publisher

Wiley-Blackwell

Topic

  • Condensed Matter Physics

Status

Published

ISBN/ISSN/Other

  • ISSN: 1616-3028