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Attractive potential around a buried metallic gate in a Schottky Collector Hot Electron Transistor

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Author

Summary, in English

We report on the formation of an attractive potential around buried metal wires in a novel design for the Hot Electron Transistor (HET). In this device, the doped base layer in the HET is replaced by an embedded metal grating, which is forward biased beyond flat band conditions in order to efficiently extract carriers from the emitter into the active region. These carriers are collected in a Schottky Collector contact. By tuning the gate and collector voltages, the potential profile around the wires can be repulsive as well as attractive. This is a key result for the realisation of a Biprism device.

Publishing year

2002

Language

English

Pages

81-85

Publication/Series

Institute of Physics Conference Series

Volume

170

Document type

Journal article

Publisher

IOP Publishing

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Status

Published

ISBN/ISSN/Other

  • ISSN: 0951-3248