850/900/1800/1900MHz Quad-Band CMOS Medium Power Amplifier

Summary, in English

This paper presents a two-stage quad-band CMOS RF power amplifier. The power amplifier is fabricated in a 0.25 mum CMOS process. The measured 1-dB compression point between 800 and 900 MHz is 15 dBm plusmn 0.2 dB with maximum 18% PAE, and between 1800 and 1900MHz is 17.5dBm plusmn 0.7dB with maximum 17% PAE. The measured gains in the two bands are 23.6 dB plusmn 0.7 dB and 13 dB plusmn 2.1 dB, respectively.

• Author: H Aniktar; Henrik Sjöland; J H, Mikkelsen; T Larsen
• Department/s: Department of Electrical and Information Technology
• Publishing year: 2006
• Language: English
• Pages: 403-406
• Publication/Series: Proceedings of European Microwave Week 2006
• Links: http://ieeexplore.ieee.org/iel5/4057701/4057702/04057835.pdf?tp=&isnumber=&arnumber=4057835
• Document type: Conference paper
• Topic: Electrical Engineering, Electronic Engineering, Information Engineering
• Status: Published