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A 90nm CMOS UWB LNA

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Author

Summary, in English

A single-ended two-stage 3.1-10.6GHz Low Noise Amplifier aimed for Ultra Wide Band (UWB) communication is presented. The LNA is fabricated in a 90nm CMOS process and measures just 0.31x0.41 mm2 including pads. The first stage topology is common-gate, to achieve a wideband input match. The second stage is a common source stage with resistive shunt feedback, to achieve high and flat gain over a wide frequency range. The chip was measured using RF-probes and has a gain of 17.25±1.25dB, a noise figure of 4.1-9.4 dB, and an input reflection S11 better than -12dB between 3.1GHz and 10.6GHz, while consuming 8.6mA from a 1V supply.

Publishing year

2008

Language

English

Pages

25-28

Publication/Series

[Host publication title missing]

Document type

Conference paper

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Conference name

Norchip Conference, 2008

Conference date

2008-11-16 - 2008-11-17

Conference place

Talinn, Estonia

Status

Published

Research group

  • Analog RF

ISBN/ISSN/Other

  • ISBN: 978-1-4244-2492-4