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Remnant magnetoresistance in ferromagnetic (Ga,Mn)As nanostructures

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Author

  • T. Figielski
  • T. Wosinski
  • A. Morawski
  • A. Makosa
  • J. Wrobel
  • Janusz Sadowski

Summary, in English

The authors show a magnetoresistive effect that appears in a lithographically shaped, three-arm nanostructure fabricated from ferromagnetic (Ga,Mn)As layers. The effect, related to a rearrangement of magnetic domain walls between different pairs of arms in the structure, is revealed as a dependence of zero-field resistance on the direction of the previously applied magnetic field. This effect could allow designing devices with unique switching and memory properties.

Department/s

Publishing year

2007

Language

English

Publication/Series

Applied Physics Letters

Volume

90

Issue

5

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Natural Sciences
  • Physical Sciences

Status

Published

ISBN/ISSN/Other

  • ISSN: 0003-6951