The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Semiconductor nanowires as a bottom-up approach to realize nanoelectronic and nanophotonic devices

På svenska

Author

Summary, in English

In this presentation will be given an up-date of the status of epitaxially grown III-V nanowires, from the perspective of growth, processing, physics and applications in the areas of nanoelectronics and nanophotonics

Publishing year

2010

Language

English

Pages

34-35

Publication/Series

INEC: 2010 3rd International Nanoelectronics Conference, vols 1 and 2

Document type

Conference paper

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Condensed Matter Physics

Conference name

3rd IEEE International Nanoelectronics Conference

Conference date

2010-01-03 - 2010-01-08

Conference place

Hong Kong, China

Status

Published