Doping Incorporation in InAs nanowires characterized by capacitance measurements

Summary, in English

Sn and Se doped InAs nanowires are characterized using a capacitance-voltage technique where the threshold voltages of nanowire capacitors with different diameter are determined and analyzed using an improved radial metal-insulator-semiconductor field-effect transistor model. This allows for a separation of doping in the core of the nanowire from the surface charge at the side facets of the nanowire. The data show that the doping level in the InAs nanowire can be controlled on the level between 2×1018 to 1×1019 cm−3, while the surface charge density exceeds 5×1012 cm−2 and is shown to increase with higher dopant precursor molar fraction.

• Author: Gvidas Astromskas; Kristian Storm; Olov Karlström; Philippe Caroff; Magnus Borgström; Lars-Erik Wernersson
• Department/s: Solid State Physics; Department of Physics; Department of Electrical and Information Technology; NanoLund: Centre for Nanoscience
• Publishing year: 2010
• Language: English
• Publication/Series: Journal of Applied Physics
• Volume: 108
• Full text: - 263 kB; Download statistics
• Links: http://jap.aip.org/resource/1/japiau/v108/i5/p054306_s1; http://dx.doi.org/10.1063/1.3475356
• Document type: Journal article
• Publisher: American Institute of Physics (AIP)
• Topic: Condensed Matter Physics; Electrical Engineering, Electronic Engineering, Information Engineering
• Keywords: III-V semiconductors; MISFET; nanowires; semiconductor doping
• Status: Published
• Research group: Nano
• ISBN/ISSN/Other: ISSN: 0021-8979