The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Growth of vertical InAs nanowires on heterostructured substrates

På svenska

Author

  • Stefano Roddaro
  • Philippe Caroff
  • Giorgio Biasiol
  • Francesca Rossi
  • Claudio Bocchi
  • Kristian Storm
  • Linus Fröberg
  • Jakob B. Wagner
  • Lars Samuelson
  • Lars-Erik Wernersson
  • Lucia Sorba
Show all

Summary, in English

We investigate the Au-assisted growth of InAs nanowires on two different kinds of heterostructured substrates: GaAs/AlGaAs structures capped by a 50 nm thick InAs layer grown by molecular beam epitaxy and a 2 mu m thick InAs buffer layer on Si(111) obtained by vapor phase epitaxy. Morphological and structural properties of substrates and nanowires are analyzed by atomic force and transmission electron microscopy. Our results indicate a promising direction for the integration of III-V nanostructures on Si-based electronics as well as for the development of novel micromechanical structures incorporating nanowires as their active elements.

Publishing year

2009

Language

English

Publication/Series

Nanotechnology

Volume

20

Issue

28

Document type

Journal article

Publisher

IOP Publishing

Topic

  • Nano Technology

Status

Published

Research group

  • Nano

ISBN/ISSN/Other

  • ISSN: 0957-4484