Intersubband photoconductivity of self-assembled InAs quantum dots embedded in InP
Author
Summary, in English
In this article, we present the results from photoconductivity measurements in the infrared spectral region (3-10 mum) on ensembles of self-assembled InAs quantum dots embedded in a matrix of InP. In the spectral distribution of the photocurrent, peaks are observed which we interpret in terms of transitions from the dots' ground- and first-excited states to the conduction band of the dots/matrix. Furthermore, we have calculated the expected photoresponse and found it to be in qualitative agreement with our experimental data.
Department/s
Publishing year
2004
Language
English
Pages
1829-1831
Publication/Series
Applied Physics Reviews
Volume
95
Issue
4
Document type
Journal article
Publisher
American Institute of Physics (AIP)
Topic
- Condensed Matter Physics
Status
Published
ISBN/ISSN/Other
- ISSN: 1931-9401