Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor
Author
Summary, in English
An n-type InAs/InAsP heterostructure nanowire field-effect transistor has been fabricated and compared with a homogeneous InAs field-effect transistor. For the same device geometry, by introduction of the heterostructure, the threshold voltage is shifted 4 V, the maximum current on-off ratio is enhanced by a factor of 10 000, and the subthreshold swing is lowered by a factor 4 compared to the homogeneous transistor. At the same time, the drive current remains constant for a fixed gate overdrive. A single nanowire heterostructure transistor has a transconductance of 5 mu A/V at a low source-drain voltage of 0.3 V. For the homogeneous InAs transistor, we deduced a high electron mobility of 1500 cm(2)/Vs.
Publishing year
2006
Language
English
Pages
1842-1846
Publication/Series
Nano Letters
Volume
6
Issue
9
Document type
Journal article
Publisher
The American Chemical Society (ACS)
Topic
- Nano Technology
Status
Published
ISBN/ISSN/Other
- ISSN: 1530-6992