Growth and optical properties of strained GaAs-GaxIn1-xP core-shell nanowires

Summary, in English

We have synthesized GaAs-GaxIn1-xP (0.34 < x < 0.69) core-shell nanowires by metal-organic vapor phase epitaxy. The nanowire core was grown Au-catalyzed at a low temperature (450 degrees C) where only little growth takes place on the side facets. The shell was added by growth at a higher temperature (600 degrees C), where the kinetic hindrance of the side facet growth is overcome. Photoluminescence measurements on individual nanowires at 5 K showed that the emission efficiency increased by 2 to 3 orders of magnitude compared to uncapped samples. Strain effects on the band gap of lattice mismatched core-shell nanowires were studied and confirmed by calculations based on deformation potential theory.

• Author: Niklas Sköld; Lisa Karlsson; Magnus Larsson; Mats-Erik Pistol; Werner Seifert; Johanna Trägårdh; Lars Samuelson
• Department/s: Solid State Physics; Centre for Analysis and Synthesis
• Publishing year: 2005
• Language: English
• Pages: 1943-1947
• Publication/Series: Nano Letters
• Volume: 5
• Issue: 10
• Links: http://dx.doi.org/10.1021/nl051304s
• Document type: Journal article
• Publisher: The American Chemical Society (ACS)
• Topic: Nano Technology; Condensed Matter Physics
• Status: Published
• ISBN/ISSN/Other: ISSN: 1530-6992