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InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch.

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Author

Summary, in English

We demonstrate the growth of InSb-based nanowire heterostructures by metalorganic vapour phase epitaxy and use it to integrate InSb on extremely lattice-mismatched III-V nanowire templates made of InAs, InP, and GaAs. Influence of temperature, V/III ratio, and diameter are investigated in order to investigate the growth rate and morphology. The range of growth temperatures used for InSb nanowire growth is very similar to that used for planar growth due to the nature of the precursor decomposition. This makes optimization of growth parameters very important, and more difficult than for most other nanowire III-V materials. Analysis of the InSb nanowire epitaxial quality when grown on InAs, InP, and GaAs, along with InSb segment and particle compositions are reported. This successful direct integration of InSb nanowires, on nanowire templates with unprecedented strain levels show great promise for fabrication of vertical InSb devices.

Publishing year

2009

Language

English

Publication/Series

Nanotechnology

Volume

20

Issue

49

Document type

Journal article

Publisher

IOP Publishing

Topic

  • Nano Technology

Status

Published

Research group

  • Nano

ISBN/ISSN/Other

  • ISSN: 0957-4484