Particle-assisted GaxIn1-xP nanowire growth for designed bandgap structures

Summary, in English

Non-tapered vertically straight GaxIn1-xP nanowires were grown in a compositional range from Ga0.2In0.8P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal-organic vapor phase epitaxy. X-ray energy dispersive spectroscopy in transmission electron microscopy revealed homogeneous radial material composition in single nanowires, whereas variations in the material composition were found along the nanowires. High-resolution x-ray diffraction indicates a variation of the material composition on the order of about 19% measuring an entire sample area, i.e., including edge effects during growth. The non-capped nanowires emit room temperature photoluminescence strongly in the energy range of 1.43-2.16 eV, correlated with the bandgap expected from the material composition.

• Author: Daniel Jacobsson; J. M. Persson; D. Kriegner; T. Etzelstorfer; Jesper Wallentin; Jakob Wagner; J. Stangl; Lars Samuelson; Knut Deppert; Magnus Borgström
• Department/s: Solid State Physics; Centre for Analysis and Synthesis; NanoLund: Centre for Nanoscience
• Publishing year: 2012
• Language: English
• Publication/Series: Nanotechnology
• Volume: 23
• Issue: 24
• Links: http://dx.doi.org/10.1088/0957-4484/23/24/245601
• Document type: Journal article
• Publisher: IOP Publishing
• Topic: Nano Technology
• Status: Published
• ISBN/ISSN/Other: ISSN: 0957-4484