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Tunable effective g factor in InAs nanowire quantum dots

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Author

  • Mikael Björk
  • Andreas Fuhrer
  • Adam Hansen
  • Marcus Larsson
  • Linus Fröberg
  • Lars Samuelson

Summary, in English

We report tunneling spectroscopy measurements of the Zeeman spin splitting in InAs few-electron quantum dots. The dots are formed between two InP barriers in InAs nanowires with a wurtzite crystal structure grown using chemical beam epitaxy. The values of the electron g factors of the first few electrons entering the dot are found to strongly depend on dot size. They range from close to the InAs bulk value in large dots vertical bar g(*)vertical bar=13 down to vertical bar g(*)vertical bar=2.3 for the smallest dots.

Publishing year

2005

Language

English

Publication/Series

Physical Review B (Condensed Matter and Materials Physics)

Volume

72

Issue

20

Document type

Journal article

Publisher

American Physical Society

Topic

  • Condensed Matter Physics

Status

Published

ISBN/ISSN/Other

  • ISSN: 1098-0121