The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Memory Behavior of the Planar Hall Effect in Ferromagnetic (Ga, Mn)As/GaAs Superlattices

På svenska

Author

  • T. Wosinski
  • W. Wesela
  • A. Makosa
  • T. Figielski
  • Janusz Sadowski

Summary, in English

The planar Hall effect (PHE) has been studied in short period (Ga, Mn)As/GaAs superlattices displaying a ferromagnetic interlayer coupling between the magnetic layers. Complex dependence of the PHE on applied magnetic field is explained by taking into account the magnetocrystalline anisotropy of the (Ga, Mn)As layers, which results from biaxial compressive strain in the layers epitaxially grown on GaAs. Two-state behavior of the planar Hall resistance at zero magnetic field provides its usefulness for applications in nonvolatile memory devices. In addition, using an appropriate sequence of applied magnetic fields four different states of the planar Hall resistance, suitable for quaternary memory devices, can be realized owing to the formation of a stable multidomain structure in the Hall bar.

Department/s

Publishing year

2010

Language

English

Pages

83-86

Publication/Series

Journal of Superconductivity and Novel Magnetism

Volume

23

Issue

1

Document type

Conference paper

Publisher

Springer

Topic

  • Natural Sciences
  • Physical Sciences

Keywords

  • Planar Hall effect
  • Ferromagnetic semiconductors
  • Superlattices
  • devices
  • Memory

Conference name

5th International Conference on Physics and Applications of Spin-Related Phenomena in Semiconductors

Conference date

2008-08-03 - 2008-08-06

Conference place

Foz do Iguacu, Brazil

Status

Published

ISBN/ISSN/Other

  • ISSN: 1557-1947
  • ISSN: 1557-1939