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As3d core level studies of (GaMn)As annealed under As capping

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Author

  • Intikhab Ulfat
  • Johan Adell
  • J. Sadowski
  • L. Ilver
  • J. Kanski

Summary, in English

The surface of a Ga0.95Mn0.05As layer subjected to low temperature annealing under As capping has been studied by core level photoemission with focus on As3d spectrum. By detailed comparison with the surface of pure GaAs subjected to the same surface treatment, the As spectral component of the reacted surface layer has been identified. The relative intensity of this component is consistent with the notion of an MnAs monolayer terminating the annealed (GaMn)As surface. (C) 2009 Elsevier B.V. All rights reserved.

Department/s

Publishing year

2010

Language

English

Pages

125-128

Publication/Series

Surface Science

Volume

604

Issue

2

Document type

Journal article

Publisher

Elsevier

Topic

  • Physical Sciences
  • Natural Sciences

Keywords

  • Post-growth annealing
  • (GaMn)As
  • Core level photoemission
  • As3d spectrum

Status

Published

ISBN/ISSN/Other

  • ISSN: 0039-6028