Temperature dependent properties of InSb and InAs nanowire field-effect transistors
Author
Summary, in English
We present temperature dependent electrical measurements on InSb and InAs nanowire field-effect transistors (FETs). The FETs are fabricated from InAs/InSb heterostructure nanowires, where one complete transistor is defined within each of the two segments. Both the InSb and the InAs FETs are n-type with good current saturation and low voltage operation. The off-current for the InSb FET shows a strong temperature dependence, which we attribute to a barrier lowering due to an increased band-to-band tunneling in the drain part of the channel.
Department/s
Publishing year
2010
Language
English
Publication/Series
Applied Physics Letters
Volume
96
Issue
15
Document type
Journal article
Publisher
American Institute of Physics (AIP)
Topic
- Condensed Matter Physics
Keywords
- field effect transistors
- nanowires
Status
Published
Research group
- Nano
ISBN/ISSN/Other
- ISSN: 0003-6951