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Domain-wall contribution to magnetoresistance of a ferromagnetic (Ga,Mn)As layer

På svenska

Author

  • T. Wosinski
  • T. Figielski
  • O. Pelya
  • A. Makosa
  • A. Morawski
  • Janusz Sadowski
  • W. Dobrowolski
  • R. Szymczak
  • J. Wrobel

Summary, in English

Low-temperature charge-carrier transport in simple magnetoresistive nanodevices, consisted of narrow constrictions of submicron width in the epitaxial layer of a ferromagnetic (Ga,Mn)As semiconductor, has been investigated and correlated with magnetic properties of the layer. The devices containing constrictions; revealed abrupt jumps of a reduced resistance that appeared when the sweeping magnetic field crossed the regions of the coercive field of the layer magnetization. In contrast, the non-constricted reference device displayed abrupt jumps of an enhanced resistance at the same values of magnetic field. We interpret the both features, whose positions on the magnetic-field scale reflect the hysteresis loop of magnetization, as manifestation of domain wall contribution to the (Ga,Mn)As layer resistance. The negative contribution of a domain wall to the resistance in the constricted device results most likely from the suppression of the weak localization effects by a domain wall located at the constriction.

Department/s

Publishing year

2007

Language

English

Pages

472-476

Publication/Series

Physica Status Solidi. A, Applied Research

Volume

204

Issue

2

Document type

Journal article

Publisher

John Wiley & Sons Inc.

Topic

  • Physical Sciences
  • Natural Sciences

Status

Published

ISBN/ISSN/Other

  • ISSN: 0031-8965