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Determination of diffusion lengths in nanowires using cathodoluminescence

Author

Summary, in English

We used cathodoluminescence imaging to determine diffusion lengths in III-V semiconductor nanowires, grown by metal-organic chemical vapor deposition seeded by gold nanoparticles. Intensity profiles were recorded either from the interface between the substrate and homogeneous nanowires, or from segments in nanowires containing axial heterostructures to determine the diffusion length. We determined diffusion lengths of 0.10 to 0.90 mu m, the shortest for uncapped wires. The reduction is attributed largely to surface recombination. (C) 2010 American Institute of Physics. [doi:10.1063/1.3473829]

Publishing year

2010

Language

English

Publication/Series

Applied Physics Letters

Volume

97

Issue

7

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Condensed Matter Physics

Keywords

  • quantum wires
  • semiconductor
  • semiconductor heterojunctions
  • semiconductor growth
  • nanowires
  • nanoparticles
  • MOCVD
  • III-V semiconductors
  • gold
  • gallium arsenide
  • diffusion
  • aluminium compounds
  • cathodoluminescence
  • surface recombination

Status

Published

ISBN/ISSN/Other

  • ISSN: 0003-6951