Determination of diffusion lengths in nanowires using cathodoluminescence
Author
Summary, in English
We used cathodoluminescence imaging to determine diffusion lengths in III-V semiconductor nanowires, grown by metal-organic chemical vapor deposition seeded by gold nanoparticles. Intensity profiles were recorded either from the interface between the substrate and homogeneous nanowires, or from segments in nanowires containing axial heterostructures to determine the diffusion length. We determined diffusion lengths of 0.10 to 0.90 mu m, the shortest for uncapped wires. The reduction is attributed largely to surface recombination. (C) 2010 American Institute of Physics. [doi:10.1063/1.3473829]
Publishing year
2010
Language
English
Publication/Series
Applied Physics Letters
Volume
97
Issue
7
Document type
Journal article
Publisher
American Institute of Physics (AIP)
Topic
- Condensed Matter Physics
Keywords
- quantum wires
- semiconductor
- semiconductor heterojunctions
- semiconductor growth
- nanowires
- nanoparticles
- MOCVD
- III-V semiconductors
- gold
- gallium arsenide
- diffusion
- aluminium compounds
- cathodoluminescence
- surface recombination
Status
Published
ISBN/ISSN/Other
- ISSN: 0003-6951