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Selective etching of III-V nanowires for molecular junctions

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Author

  • Christian Kallesoe
  • Kristian Molhave
  • Thomas Mårtensson
  • Torben Mikael Hansen
  • Lars Samuelson
  • Peter Boggild

Summary, in English

Selective etching of heterostructure III-V nanowires can be used to form tips and narrow gaps simultaneously on multiple nanowires on a single wafer. In this study we tested bromine based etching of gallium arsenide segments in gallium phosphide nanowires. Depending on the etchant and etching conditions, a variety of gap topologies and tip-like structures were observed. The method is compatible with wafer-scale integration of molecular electronics within existing silicon technology, offering control of materials composition, morphology and electronic band gap of the electrodes that can be made so small they might be used as contact electrodes for individual molecules. (C) 2008 Elsevier B.V. All rights reserved.

Publishing year

2008

Language

English

Pages

1179-1181

Publication/Series

Microelectronic Engineering

Volume

85

Issue

5-6

Document type

Journal article

Publisher

Elsevier

Topic

  • Condensed Matter Physics

Keywords

  • molecular junction
  • III-V
  • nanowires
  • selective etching

Status

Published

ISBN/ISSN/Other

  • ISSN: 1873-5568